Rare-earth oxide superlattices on Si(111)

2011-08-26 Researchers at the Paul-Drude Institute for Solid State Electronics in Berlin, Germany, have grown digital epitaxial rare-earth oxide layers on Si(111) substrates from oxide source material by molecular beam epitaxy at substrate temperatures as low as 200 °C.

This breakthrough became possible by using CreaTec's TUBO source to directly evaporate the low vapor pressure oxides. The large lattice mismatch of 9% between La₂O₃ and Lu₂O₃ symmetric to Si allows for an intentional variation of both the internal strain of the superlattice and its average lattice mismatch with the substrate over a wide range, offering new ways for the design of gate dielectrics for future CMOS devices.

The results have just been published in Journal of Crystal Growth.

For more information on this and other scientific results obtained using CreaTec equipment, go to our results section.