Decomposition Effusion Cell (DECO-As)

Downloads

Specifications

The Decomposition Effusion Cell is designed to generate ultra-pure arsenic (As2) by decomposition of gallium arsenide (GaAs | purity > 6 N). The use is similar to a standard effusion cell, where the source material is loaded into the crucible and evaporated by heating the crucible via radiation heating stage.

Because of the incongruent evaporation of GaAs, the As2 is generated by a lower temperature compared to Ga. Therefore, the Ga remains stable inside the crucible, while the As2 comes out of the effusion cell at the orifice. To avoid the Ga atoms to flow out of the cell with the As2 beam out, there is a Ga trapping cap at the orifice. This ensures that no Ga atoms can leave the effusion cell.

The ratio As2: Ga in the As2 molecular beam is approx. 1:10-5, by using the Ga trapping cap.

An extra valve above the Ga trapping cap is available to lower the beam intensity. This valve allows shutting ON and OFF the As2 beam in a very short time in a ratio approx. 1:10. This version of As2 source is an affordable and easily operated alternative to valved arsenide sources.

Available versions:
  • Valved Decomposition Effusion Cell (V-DECO-As)
  • Multiple cells

 

TYPE DECO-As
TEMPERATURE RANGE 150 - 800 °C
HEATING SYSTEM wire filament | radiation heating
MAX. POWER 360 W (25 cc crucible)
BAKE-OUT TEMPERATURE 250 °C
FLANGE SIZE DN 40 | 63 | 100 | 160 (others on request)
MAX. OUTER DIAMETER 38 | 61 | 97 mm (others on request)
MIN. UHV LENGTH 180 mm

Related Products

DECO-P     Crucibles     Effusion Cell Shutters

Power Supply     Vacuum Retraction Unit     Water Cooling Systems