MBE-System for III-Nitrides
Designed by CreaTec, the state-of-the-art MBE system for III-nitrides combines standard MBE growth techniques using a nitrogen plasma source with CVD growth techniques based on a special ammonia source. The chamber design is optimized for the usage of ammonia using a special cryoshroud with a unique pumping system for a high throughput of grown layers. The results obtained from epitaxial GaN layers are excellent and demonstrate the high performance of the system.
Technical Data:
Type | RS-3-N |
Concept | Load-lock, preparation, sputter and growth chamber |
Made from | Stainless steel (316 L / 316 LN) |
Sample size | 4 inch or as specified |
Effusion cell port number | 10 |
Manipulator | Radiation heating up to 1100 °C |
Cooling | Two shrouds in the area of the substrate and in the area of the effusion cells |
Bakeout temperature | 200°C |
Shipping | Wooden box |
Installation | Included |
Standard:
Growth chamber size | 18 inch or as specified |
Number of effusion cells | 1 x ammonia source, 1 x CLC, 2 x DFC, 2 x SFC, 1 x plasma source with integrated shutter |
Pumping | Ion pump (growth and preparation chamber) and TMP (load-lock and sputter chamber) |
Ammonia trap | Redundant cooling system for alternating operation (for a high throughput) |
Sample transfer | Manual with magnetically coupled transfer rod |
Sample preparation | Heating station in the preparation chamber |
Sample storage | Cassette for 10 wafers |
Bake out system | Included |
Frame | Solid frame made of stainless steel |
Electronics | Stored in an external 19 inch rack |
Available Downloads:
For further information, please contact
sales(at)createc.de.